IRFZ44N is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 17.5 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 49 A

Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and …

IRFZ44N,127 – N-Channel 55 V 49A (Tc) 110W (Tc) Through Hole TO-220AB from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Apr 18, 2019 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start …

Jun 3, 2025 · The IRFZ44N MOSFET is specifically designed for applications like motor drivers, inverters, SMPS, and LED systems. And, this is because of its high current carrying capacity, …

In this article, we’ll explore the IRFZ44N, including its pinout, equivalent components, practical uses, features, and how and where to use this high-current N-channel MOSFET. The …

IRFZ44N Transistor Datasheet, IRFZ44N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.